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AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: -- P1dB: 30 W typical. -- Continuous wave (CW) power gain: @ P1dB = 15 dB. -- CW efficiency @ P1dB = 55% typical. -- Return loss: -12 dB.
Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years.
Figure 1. AGR19030EF (flanged) Package
Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW output power. Large signal impedance parameters available.
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 350 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz. -- Output power (POUT): 6 W. -- Power gain: 16 dB. -- Efficiency: 24.8%. -- IM3: -34.5 dBc. -- ACPR: -49 dBc.
ESD Rating*
AGR19030EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
EDGE Features
Typical EDGE performance, 1960 MHz, 26 V, IDQ = 250 mA: -- Output power (POUT): 12 W typical. -- Power gain: 15.5 dB. -- Efficiency: 38% typical. -- Modulation spectrum: @ 400 kHz = -61 dBc. @ 600 kHz = -74 dBc. -- Error vector magnitude (EVM) = 2.2%
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD -- TJ TSTG Value 65 -0.5, 15 87.5 0.5 200 -65, 150 Unit Vdc Vdc W W/C C C Symbol RJC Value 2.0 Unit C/W
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Parameter Off Characteristics 38 Drain-source Breakdown Voltage (VGS = 0 V, ID = 150 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Threshold Voltage (VDS = 10 V, ID = 100 A) Gate Quiescent Voltage (VDS = 28 V, ID = 300 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) Symbol V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON) Min 65 -- -- -- -- -- -- Typ -- -- -- 2.4 -- 3.8 0.3 Max -- 1 50 3 -- 4.8 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit
CRSS -- 0.8 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS 15.5 16 -- dB Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA, f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency -- 24.8 -- % (VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA, f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 -- -34.5 -- dBc (VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA, f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR -- -49.0 -- dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA, f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) P1dB 30 35 -- W Output Power at 1 dB Gain Compression (VDD = 28 V, POUT = 30 W CW, f = 1990 MHz, IDQ = 350 mA) IRL -- -12 -- dB Input Return Loss (VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA, f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz) Ruggedness No degradation in output (VDD = 28 V, POUT = 30 W CW, IDQ = 350 mA, f = 1930 MHz, VSWR = power. 10:1 [all phase angles])
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19030EF
FB1 VGG R1 C22 VDD
+
Z12 Z11 C5 Z4 Z5 Z6 2 1 3 DUT
+
+
+
C1 C2 Z1 RF INPUT C7 C3 C4 Z2 C6 Z3
C23 C12 C13 C14 C15 C16 C17 C18 C19
Z7
Z8
Z9
C20
Z10 RF OUTPUT
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
2
3
1
Parts List: Microstrip line: Z1, 0.315 in. x 0.067 in.; Z2, 0.195 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.230 in. x 0.260 in.; Z5, 0.200 in. x 0.160 in.; Z6, 0.395 in. x 0.675 in.; Z7, 0.355 in. x 0.640 in.; Z8, 0.645 in. x 0.130 in.; Z9, 0.145 in. x 0.067 in.; Z10, 0.535 in. x 0.067 in; Z11, 0.345 in. x 0.030 in; Z12, 0.275 in. x 0.050 in. ATC (R) B case chip capacitors: C5, C22: 8.2 pF 100B8R2JCA500X; C6, C20: 10 pF 100B100JCA500X; C12: 100 pF 102B100JCA500X; C13: 1000 pF 103B100JCA500X. Kemet(R) B case chip capacitors: C2, C16: 0.10 F CDR33VX104AKWS; tantalum capacitor: C17: 1 F 50 V T491C. Vitramon (R) 1206: C4, C14: 22000 F. Sprague(R) tantalum SMT (35 V): C1, C19, C23: 22 F; C18: 10 F. Murata (R) 0805: C3, C15: 0.01 F, GRM40X7R103K100AL. Johanson Giga-Trim(R) variable capacitors: C7, 0.4 pF--2.5 pF. Fair-Rite (R) ferrite bead: FB1: 2743019447. Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13. PCB etched circuit boards Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout
Figure 2. AGR19030EF Test Circuit
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 170
U CT
0.6
Z0 = 20
IN D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
180
LOA D <
0.2
0.49
OW A RD HST N GT -170 EL E
0.1
) / Yo (-jB CE
AN PT CE US ES
WA
1. 0
0.2
7 0.4
<
-80
6 0.4 4 0.0 0 -15
IV CT
IN
DU
0.3
-75
R
,O o)
5
0.0
.45
-70
06
0.
-65
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f) 1930 (f1) 1960 (f2) 1990 (f3)
Note:
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 4.49 - j6.43 10.00 - j6.30 4.06 - j5.98 9.65 - j6.25 3.78 - j5.61 9.44 - j6.33
ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2) ZS
DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
44
5
0.
0.
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
40
0
4
Z X/
5.0
-15
4.0
-20
3.
0
1.
0
f3
-160 -85
f1
0.8
V
-10
ZS
f3
f1
0.48
-90
0.6
0.
8
10
ZL
0.4
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
0.
-30
0.2 0.3
-4 0
8
0.6
0.4
10 0.1
-1
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
20
L E OF ANG
0.2
0. 19 0. 31
50
-20
0.2 2
0.2 8
0.2 9 0.2 1
0. 07 30 0.
43
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
50 GPS P1dB = 45.74 dBm (37.50 W) 17 16 15 14 POUT (dBm)Z GPS (dB)Z 40 P3dB = 46.59 dBm (45.60 W) 35 13 12 11 10 9 8 25 10 15 20 PIN (dBm)?
Test Conditions: VDD = 28 Vdc, IDQ = 350 mA, pulsed CW, 4 s (on), 40 s (off), center frequency = 1960 MHz.
45
POUT
30
25
30
35
7
Figure 4. CW POUT vs. PIN
50 45 40 (%)Z 35 30 25 20 15 10 5 0 25 30 35 POUT (dBm) Avg.Z 40 45 GPS 2.25 MHz 1.25 MHz 885 kHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 ACPR (dBc)Z
Test Conditions: VDD = 28 Vdc, IDQ = 350 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
GPS (dB),
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60 55 50 45 (%)Z 40 35 30 25 20 15 10 5 0 30 35 ACP 40 45 -60 -70 -50 -40 IM3 -20 GPS -30 IM3 (dBc), ACPR (dBc)Z 45 -10
GPS (dB),
POUT (W)Z
Test Conditions: VDD = 28 Vdc, IDQ = 350 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3 Power Gain, and Drain Efficiency vs. POUT
18 17 GPS (dB)Z 16 15 14 13
IDQ = 450 mA IDQ = 400 mA IDQ = 350 mA IDQ = 300 mA IDQ = 250 mA
25
30
35 POUT (dBm)Z
40
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-30 -35 -40 ACPR (dBc)Z -45 -50 -55 -60 -65 -70 30
IDQ = 300 mA IDQ = 250 mA
IDQ = 450 mA IDQ = 400 mA
IDQ = 350 mA
35 POUT (dBm)Z
40
45
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
-15 -20 -25 IM3 (dBc)Z -30 -35 -40 -45 -50 -55
IDQ = 350 mA IDQ = 250 mA IDQ = 300 mA IDQ = 450 mA IDQ = 400 mA
30
35 POUT (dBm)Z
40
45
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
55 50 (%), EVM (%) Z 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 600 kHz EVM 25 GPS 400 kHz -25 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 SPECTRAL REGROWTH (dBc)Z SPECTRAL REGROWTH (dBc)Z -30
GPS (dB),
POUT (W) Avg.Z
Test Conditions: VDD = 26 Vdc, IDQ = 250 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
55 50 (%), EVM (%) Z 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 600 kHz EVM 25 GPS 400 kHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80
GPS (dB),
POUT (W) Avg.Z
Test Conditions: VDD = 28 Vdc, IDQ = 250 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
AGR19030EF 30 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR19030EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
PEAK DEVICES AGR19030XF AGR18030F YYWWLL XXXXX YYWWLL ZZZZZZZ
1 3 3
ZZZZZZZ 2
2
Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.

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